SPIE Optics + Photonicsにて幸村孝由サブチームリーダの研究を発表「Performance Kyoto's x-ray astronomy SOI pixel sensor in the event-driven readout mode」

8月11日～8月15日サンディエゴで開催されたSPIE Optics + Photonics(The international society for optics and photonics)にて、スペースQOL・システムデザインチーム幸村孝由サブチームリーダーの研究が発表されました。
■Performance Kyoto’s x-ray astronomy SOI pixel sensor in the event-driven readout mode
Takeshi Go Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Soudai Harada, Tomoyuki Okuno, Kazuho Kayama, Yuki Amano, Hideki Hayashi, Katsuhiro Tachibana, Kyoto Univ. (Japan); Ayaki Takeda, Koji Mori, Yusuke Nishioka, Kohei Fukuda, Univ. of Miyazaki (Japan); Takayoshi Kohmura, Kouichi Hagino, Kousuke Negishi, Kenji Oono, Keigo Yarita, Tokyo Univ. of Science (Japan); Yasuo Arai, Ikuo Kurachi, High Energy Accelerator Research Organization, KEK (Japan); Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Sumeet Shrestha, Shunta Nakanishi, Shizuoka Univ. (Japan); Hiroshi Tsunemi, Osaka Univ. (Japan); Junko S. Hiraga,
Kwansei Gakuin Univ. (Japan)
■概要
We have been developing monolithic active pixel sensors, known as Kyoto’s X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented in each pixel offers microsecond time resolution and enables reduction of the non-X-ray background that dominates the high X-ray energy band above 5–10 keV. A fully depleted SOI with a thick depletion layer and back illumination offers wide band coverage of 0.3–40 keV. Here, we report recent progress in the X-ray SOIPIX development. In this study, we achieved an energy resolution of 300 eV (FWHM) at 6 keV and a read-out noise of 33 e- (rms) in the frame readout mode, which allows us to clearly resolve Mn-Kα and Kβ. Moreover, we produced a fully depleted layer with a thickness of 500 μm. The event-driven readout mode has already been successfully demonstrated.
■The international society for optics and photonicsサイトはこちら