Top > Back > 学術論文・プロシーディングス・著作 の検索結果 70 件中 1‐30 件目
A time-delayed physical reservoir with various time constants |
[ 全著者名 ] Yutaro Yamazaki and Kentaro Kinoshita |
[ 掲載誌名 ] Applied Physics Express |
[ 掲載年月 ] 2024年 2月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Photonic Physical Reservoir Computing with TunableRelaxation Time Constant |
[ 全著者名 ] Yutaro Yamazaki and Kentaro Kinoshita |
[ 掲載誌名 ] Advanced Science |
[ 掲載年月 ] 2023年 11月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Characterizationof Information-Transmitting Materials Produced in Ionic Liquid based Neuromorphic Electrochemical Devices for Physical Reservoir Computing |
[ 全著者名 ] Dan Sato, HisashiShima, Takuma Matsuo, Masaharu Yonezawa, KentaroKinoshita, Masakazu Kobayashi, Yasuhisa Naitoh, Hiroyuki Akinaga, Shunsuke Miyamoto, Toshiki Nokami, and Toshiyuki Itoh |
[ 掲載誌名 ] ACS Applied Materials & Interfaces |
[ 掲載年月 ] 2023年 10月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Efficient Collection of Oil Microdroplets by Hyperbranched Space-Filling Open Microfluidic Channels |
[ 全著者名 ] Yusho Segawa, Kentaro Kinoshita, Hiroyuki Kai |
[ 掲載誌名 ] Advanced Materials Interfaces |
[ 掲載年月 ] 2023年 10月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Temperature Driven Current–Voltage Characteristics of Ionic Liquid Type Intelligent Connection Device |
[ 全著者名 ] MASAKAZU KOBAYASHI, YASUMITSU ORII, HISASHI SHIMA, YASUHISA NAITOH, HIROYUKI AKINAGA, DAN SATO, TAKUMA MATSUO, KENTARO KINOSHITA, TOSHIKI NOKAMI, AND TOSHIYUKI ITOH |
[ 掲載誌名 ] IEEE Journal of the Electron Devices Society |
[ 掲載年月 ] 2022年 8月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Dynamic Nonlinear Behavior of Ionic Liquid-Based Reservoir Computing Devices |
[ 全著者名 ] Takuma Matsuo, Dan Sato, Sang-Gyu Koh, Hisashi Shima*, Yasuhisa Naitoh, Hiroyuki Akinaga, Toshiyuki Itoh, Toshiki Nokami, Masakazu Kobayashi, and Kentaro Kinoshita* |
[ 掲載誌名 ] ACS Appl. Mater. Interfaces |
[ 掲載年月 ] 2022年 7月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Structural Strengthening of Metal−Organic Frameworks Owing to the Confinement Effect of Ionic Liquids in the Nanopores |
[ 全著者名 ] Sang-Gyu Koh, Taiki Koide, Asahi Arai, Ichiro Ohira, and Kentaro Kinoshita |
[ 掲載誌名 ] Journal of Physical Chemistry C |
[ 掲載年月 ] 2022年 4月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Reservoir computing with dielectric relaxation at an electrode–ionic liquid interface |
[ 全著者名 ] Sang‑Gyu Koh, Hisashi Shima, Yasuhisa Naitoh, HiroyukiAkinaga, Kentaro Kinoshita |
[ 掲載誌名 ] Scientific Reports |
[ 掲載年月 ] 2022年 4月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Control of the data-retention characteristics of ionic-liquid conducting bridge memory by designing device structures based on corrosion mechanisms |
[ 全著者名 ] Hiroshi Sato, Hisashi Shima, Yusei Honma, Yasuhisa Naitoh, Hiroyuki Akinaga, Toshiki Nokami, Toshiyuki Itoh, Dan Sato, and Kentaro Kinoshita |
[ 掲載誌名 ] Applied Physics Express |
[ 掲載年月 ] 2021年 8月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Liquid-Solid Hybrid Memory Device Achieved by Unique Features of Ionic Liquids |
[ 全著者名 ] HIROSHI SATO, HISASHI SHIMA, YUSEI HONMA, YASUHISA NAITOH, HIROYUKI AKINAGA, TOSHIKI NOKAMI, TOSHIYUKI ITOH, KENTARO KINOSHITA |
[ 掲載誌名 ] IEEE Access |
[ 掲載年月 ] 2021年 5月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Memristors With Controllable Data Volatility by Loading Metal Ion-Added Ionic Liquids |
[ 全著者名 ] Hiroshi Sato, Hisashi Shima, Toshiki Nokami, Toshiyuki Itoh, Yusei Honma, Yasuhisa Naitoh, Hiroyuki Akinaga, and Kentaro Kinoshita |
[ 掲載誌名 ] Frontiers in Nanotechnology |
[ 掲載年月 ] 2021年 3月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Controlling filament growth mode in resistive random-access memory based on thermal flow |
[ 全著者名 ] Yuta Sasaki and Kentaro Kinoshita |
[ 掲載誌名 ] JAPANESE JOURNAL OF APPLIED PHYSICS |
[ 掲載年月 ] 2021年 2月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Ionic liquid-loaded metal-organic framework system for nanoionic device applications |
[ 全著者名 ] Sang-Gyu Koh, Taiki Koide, Takumi Morita, and Kentaro Kinoshita |
[ 掲載誌名 ] JAPANESE JOURNAL OF APPLIED PHYSICS |
[ 掲載年月 ] 2021年 2月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Oxide-based selector with trap-filling controlled threshold switching |
[ 全著者名 ] Shuhei Saitoh and Kentaro Kinoshita |
[ 掲載誌名 ] APPLIED PHYSICS LETTERS |
[ 掲載年月 ] 2020年 3月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Operando observation of resistive switching in a resistive random-access memory by a laser-excited photoemission electron microscope |
[ 全著者名 ] Yuji Okuda, Junpei Kawakita, Toshiyuki Taniuchi, Hisashi Shima,Atsushi Shimizu, Yasuhisa Naitoh, Kentaro Kinoshita, Hiro Akinaga, and Shik Shin |
[ 掲載誌名 ] JAPANESE JOURNAL OF APPLIED PHYSICS |
[ 掲載年月 ] 2019年 12月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Repeatable and reproducible formation/rupture of oxygen vacancy filaments in the vicinity of a polycrystalline HfO2 surface |
[ 全著者名 ] Sota Hida, Takumi Morita, Takahiro Yamasaki, Jun Nara, Takahisa Ohno, and Kentaro Kinoshita |
[ 掲載誌名 ] AIP Advances |
[ 掲載年月 ] 2019年 3月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Significantly Improved Performance of a Conducting-bridge Random Access Memory (CB-RAM) Device Using Copper-containing Glyme Salt |
[ 全著者名 ] Hiroki Yamaoka, Takuya Yamashita, Akinori Harada, Atsushi Sakaguchi, Kentaro Kinoshita, Satoru Kishida, Shuichi Hayase, Toshiki Nokami, and Toshiyuki Itoh |
[ 掲載誌名 ] CHEMISTRY LETTERS |
[ 掲載年月 ] 2017年 10月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Switching mechanism in resistive random access memory by first-principles calculation using practical model based on experimental results |
[ 全著者名 ] Takumi Moriyama, Takahiro Yamasaki, Sohta Hida, Takahisa Ohno, Satoru Kishida, and Kentaro Kinoshita |
[ 掲載誌名 ] JAPANESE JOURNAL OF APPLIED PHYSICS |
[ 掲載年月 ] 2017年 3月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Improvement of Switching Endurance of Conducting-Bridge Random Access Memory by Addition of Metal Ion-Containing Ionic Liquid |
[ 全著者名 ] Kentaro Kinoshita, Atsushi Sakaguchi, Akinori Harada, Hiroki Yamaoka, Satoru Kishida, Yukinobu Fukaya, Toshiki Nokami, and Toshiyuki Itoh |
[ 掲載誌名 ] JAPANESE JOURNAL OF APPLIED PHYSICS |
[ 掲載年月 ] 2017年 3月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Experimental and Theoretical Studies of Resistive Switching in Grain Boundaries of Polycrystalline Transition Metal Oxide Film |
[ 全著者名 ] Takumi Moriyama, Sohta Hida, Takahiro Yamasaki, Takahisa Ohno, Satoru Kishida,and Kentaro Kinoshita |
[ 掲載誌名 ] MRS Advances |
[ 掲載年月 ] 2017年 1月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Resistance given by tiling grain surface with micro surface structures in polycrystalline metal oxide |
[ 全著者名 ] T. Moriyama, T. Yamasaki, T. Ohno, S. Kishida, and K. Kinoshita |
[ 掲載誌名 ] JOURNAL OF APPLIED PHYSICS |
[ 掲載年月 ] 2016年 12月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
"Improved Performance of a Conducting-Bridge Random Access Memory using Ionic Liquids" [Back coverに採択] |
[ 全著者名 ] Akinori Harada, Hiroki Yamaoka, Shota Tojo, Kouhei Watanabe, Atsushi Sakaguchi, Kentaro Kinoshita, Satoru Kishida, Yukinobu Fukaya, Kazuhiko Matsumoto, Rika Hagiwara, Hiroki Sakaguchi, Toshiki Nokami, Toshiyuki Itoh |
[ 掲載誌名 ] Journal of Materials Chemistry C |
[ 掲載年月 ] 2016年 6月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Influence of ultraviolet irradiation on data retention characteristics in resistive random access memory |
[ 全著者名 ] Kouhei Kimura, Kouotoku Ohmi, Satoru Kishida, and Kentaro Kinoshita |
[ 掲載誌名 ] APPLIED PHYSICS LETTERS |
[ 掲載年月 ] 2016年 3月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Simulation Study on Reproducing Resistive Switching Effect by Soret and Fick Diffusion in Resistive Random Access Memory |
[ 全著者名 ] Kentaro Kinoshita, Ryosuke Koishi, Takumi Moriyama, Kouki Kawano, Hidetoshi Miyashita, Sang-Seok Lee, and Satoru Kishida |
[ 掲載誌名 ] MRS Advances |
[ 掲載年月 ] 2016年 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Formation Mechanism of Conducting Path in Resistive Random Access Memory by First Principles Calculation Using Practical Model Based on Experimental Results |
[ 全著者名 ] Takumi Moriyama, Takahiro Yamasaki, Takahisa Ohno, Satoru Kishida, and Kentar Kinoshita |
[ 掲載誌名 ] MRS advances |
[ 掲載年月 ] 2016年 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Finding Oxygen Reservoir by Using Extremely Small Test Cell Structure for Resistive Random Access Memory with Replaceable Bottom Electrode |
[ 全著者名 ] Kentaro Kinoshita, Sang-Gyu Koh, Takumi Moriyama, Satoru Kishida |
[ 掲載誌名 ] Scientific Reports |
[ 掲載年月 ] 2015年 12月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Copper Ion Containing Ionic Liquids Provides Improved Endurance and Switching Voltage Distributions of Conducting-Bridge Random Access Memory (CB-RAM). |
[ 全著者名 ] Akinori Harada, Hiroki Yamaoka, Kouhei Watanabe, Kentaro Kinoshita*, Satoru Kishida, Yukinobu Fukaya, Toshiki Nokami, Toshiyuki Itoh* |
[ 掲載誌名 ] CHEMISTRY LETTERS |
[ 掲載年月 ] 2015年 9月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Enhanced stability of the HfO2 electrolyte and reduced working voltage of a CB-RAM by an ionic liquid |
[ 全著者名 ] A. Harada, H. Yamaoka, R. Ogata, K. Watanabe, K. Kinoshita*, S. Kishida, T. Nokami and T. Itoh* |
[ 掲載誌名 ] Journal of Materials Chemistry C |
[ 掲載年月 ] 2015年 7月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Elucidation of Metal Diffusion Mechanism in Conducting-Bridge Random Access Memory (CB-RAM) Using First-Principle Calculation |
[ 全著者名 ] Kentaro Kinoshita, Takahiro Yamasaki, Sho Yura, Takehisa Ohno, Satoru Kishida |
[ 掲載誌名 ] Advances in Science and Technology |
[ 掲載年月 ] 2014年 10月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |
Extraction of Filament Properties in Resistive Random Access Memory (ReRAM) Consisting of Binary-Transition-Metal-Oxides |
[ 全著者名 ] Takumi Moriyama, Ryosuke Koishi, Kouhei Kimura, Satoru Kishida, Kentaro Kinoshita |
[ 掲載誌名 ] Advances in Science and Technology |
[ 掲載年月 ] 2014年 10月 |
[ 著作区分 ] レフェリー付学術論文(外国語) |