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A time-delayed physical reservoir with various time constants
[ 全著者名 ] Yutaro Yamazaki and Kentaro Kinoshita
[ 掲載誌名 ] Applied Physics Express
[ 掲載年月 ] 2024年 2月
[ 著作区分 ] レフェリー付学術論文(外国語)
Photonic Physical Reservoir Computing with TunableRelaxation Time Constant
[ 全著者名 ] Yutaro Yamazaki and Kentaro Kinoshita
[ 掲載誌名 ] Advanced Science
[ 掲載年月 ] 2023年 11月
[ 著作区分 ] レフェリー付学術論文(外国語)
Characterizationof Information-Transmitting Materials Produced in Ionic Liquid based Neuromorphic Electrochemical Devices for Physical Reservoir Computing
[ 全著者名 ] Dan Sato, HisashiShima, Takuma Matsuo, Masaharu Yonezawa, KentaroKinoshita, Masakazu Kobayashi, Yasuhisa Naitoh, Hiroyuki Akinaga, Shunsuke Miyamoto, Toshiki Nokami, and Toshiyuki Itoh
[ 掲載誌名 ] ACS Applied Materials & Interfaces
[ 掲載年月 ] 2023年 10月
[ 著作区分 ] レフェリー付学術論文(外国語)
Efficient Collection of Oil Microdroplets by Hyperbranched Space-Filling Open Microfluidic Channels
[ 全著者名 ] Yusho Segawa, Kentaro Kinoshita, Hiroyuki Kai
[ 掲載誌名 ] Advanced Materials Interfaces
[ 掲載年月 ] 2023年 10月
[ 著作区分 ] レフェリー付学術論文(外国語)
Temperature Driven Current–Voltage Characteristics of Ionic Liquid Type Intelligent Connection Device
[ 全著者名 ] MASAKAZU KOBAYASHI, YASUMITSU ORII, HISASHI SHIMA, YASUHISA NAITOH, HIROYUKI AKINAGA, DAN SATO, TAKUMA MATSUO, KENTARO KINOSHITA, TOSHIKI NOKAMI, AND TOSHIYUKI ITOH
[ 掲載誌名 ] IEEE Journal of the Electron Devices Society
[ 掲載年月 ] 2022年 8月
[ 著作区分 ] レフェリー付学術論文(外国語)
Dynamic Nonlinear Behavior of Ionic Liquid-Based Reservoir Computing Devices
[ 全著者名 ] Takuma Matsuo, Dan Sato, Sang-Gyu Koh, Hisashi Shima*, Yasuhisa Naitoh, Hiroyuki Akinaga, Toshiyuki Itoh, Toshiki Nokami, Masakazu Kobayashi, and Kentaro Kinoshita*
[ 掲載誌名 ] ACS Appl. Mater. Interfaces
[ 掲載年月 ] 2022年 7月
[ 著作区分 ] レフェリー付学術論文(外国語)
Structural Strengthening of Metal−Organic Frameworks Owing to the Confinement Effect of Ionic Liquids in the Nanopores
[ 全著者名 ] Sang-Gyu Koh, Taiki Koide, Asahi Arai, Ichiro Ohira, and Kentaro Kinoshita
[ 掲載誌名 ] Journal of Physical Chemistry C
[ 掲載年月 ] 2022年 4月
[ 著作区分 ] レフェリー付学術論文(外国語)
Reservoir computing with dielectric relaxation at an electrode–ionic liquid interface
[ 全著者名 ] Sang‑Gyu Koh, Hisashi Shima, Yasuhisa Naitoh, HiroyukiAkinaga, Kentaro Kinoshita
[ 掲載誌名 ] Scientific Reports
[ 掲載年月 ] 2022年 4月
[ 著作区分 ] レフェリー付学術論文(外国語)
Control of the data-retention characteristics of ionic-liquid conducting bridge memory by designing device structures based on corrosion mechanisms
[ 全著者名 ] Hiroshi Sato, Hisashi Shima, Yusei Honma, Yasuhisa Naitoh, Hiroyuki Akinaga, Toshiki Nokami, Toshiyuki Itoh, Dan Sato, and Kentaro Kinoshita
[ 掲載誌名 ] Applied Physics Express
[ 掲載年月 ] 2021年 8月
[ 著作区分 ] レフェリー付学術論文(外国語)
Liquid-Solid Hybrid Memory Device Achieved by Unique Features of Ionic Liquids
[ 全著者名 ] HIROSHI SATO, HISASHI SHIMA, YUSEI HONMA, YASUHISA NAITOH, HIROYUKI AKINAGA, TOSHIKI NOKAMI, TOSHIYUKI ITOH, KENTARO KINOSHITA
[ 掲載誌名 ] IEEE Access
[ 掲載年月 ] 2021年 5月
[ 著作区分 ] レフェリー付学術論文(外国語)
Memristors With Controllable Data Volatility by Loading Metal Ion-Added Ionic Liquids
[ 全著者名 ] Hiroshi Sato, Hisashi Shima, Toshiki Nokami, Toshiyuki Itoh, Yusei Honma, Yasuhisa Naitoh, Hiroyuki Akinaga, and Kentaro Kinoshita
[ 掲載誌名 ] Frontiers in Nanotechnology
[ 掲載年月 ] 2021年 3月
[ 著作区分 ] レフェリー付学術論文(外国語)
Controlling filament growth mode in resistive random-access memory based on thermal flow
[ 全著者名 ] Yuta Sasaki and Kentaro Kinoshita
[ 掲載誌名 ] JAPANESE JOURNAL OF APPLIED PHYSICS
[ 掲載年月 ] 2021年 2月
[ 著作区分 ] レフェリー付学術論文(外国語)
Ionic liquid-loaded metal-organic framework system for nanoionic device applications
[ 全著者名 ] Sang-Gyu Koh, Taiki Koide, Takumi Morita, and Kentaro Kinoshita
[ 掲載誌名 ] JAPANESE JOURNAL OF APPLIED PHYSICS
[ 掲載年月 ] 2021年 2月
[ 著作区分 ] レフェリー付学術論文(外国語)
Oxide-based selector with trap-filling controlled threshold switching
[ 全著者名 ] Shuhei Saitoh and Kentaro Kinoshita
[ 掲載誌名 ] APPLIED PHYSICS LETTERS
[ 掲載年月 ] 2020年 3月
[ 著作区分 ] レフェリー付学術論文(外国語)
Operando observation of resistive switching in a resistive random-access memory by a laser-excited photoemission electron microscope
[ 全著者名 ] Yuji Okuda, Junpei Kawakita, Toshiyuki Taniuchi, Hisashi Shima,Atsushi Shimizu, Yasuhisa Naitoh, Kentaro Kinoshita, Hiro Akinaga, and Shik Shin
[ 掲載誌名 ] JAPANESE JOURNAL OF APPLIED PHYSICS
[ 掲載年月 ] 2019年 12月
[ 著作区分 ] レフェリー付学術論文(外国語)
Repeatable and reproducible formation/rupture of oxygen vacancy filaments in the vicinity of a polycrystalline HfO2 surface
[ 全著者名 ] Sota Hida, Takumi Morita, Takahiro Yamasaki, Jun Nara, Takahisa Ohno, and Kentaro Kinoshita
[ 掲載誌名 ] AIP Advances
[ 掲載年月 ] 2019年 3月
[ 著作区分 ] レフェリー付学術論文(外国語)
Significantly Improved Performance of a Conducting-bridge Random Access Memory (CB-RAM) Device Using Copper-containing Glyme Salt
[ 全著者名 ] Hiroki Yamaoka, Takuya Yamashita, Akinori Harada, Atsushi Sakaguchi, Kentaro Kinoshita, Satoru Kishida, Shuichi Hayase, Toshiki Nokami, and Toshiyuki Itoh
[ 掲載誌名 ] CHEMISTRY LETTERS
[ 掲載年月 ] 2017年 10月
[ 著作区分 ] レフェリー付学術論文(外国語)
Improvement of Switching Endurance of Conducting-Bridge Random Access Memory by Addition of Metal Ion-Containing Ionic Liquid
[ 全著者名 ] Kentaro Kinoshita, Atsushi Sakaguchi, Akinori Harada, Hiroki Yamaoka, Satoru Kishida, Yukinobu Fukaya, Toshiki Nokami, and Toshiyuki Itoh
[ 掲載誌名 ] JAPANESE JOURNAL OF APPLIED PHYSICS
[ 掲載年月 ] 2017年 3月
[ 著作区分 ] レフェリー付学術論文(外国語)
Switching mechanism in resistive random access memory by first-principles calculation using practical model based on experimental results
[ 全著者名 ] Takumi Moriyama, Takahiro Yamasaki, Sohta Hida, Takahisa Ohno, Satoru Kishida, and Kentaro Kinoshita
[ 掲載誌名 ] JAPANESE JOURNAL OF APPLIED PHYSICS
[ 掲載年月 ] 2017年 3月
[ 著作区分 ] レフェリー付学術論文(外国語)
Experimental and Theoretical Studies of Resistive Switching in Grain Boundaries of Polycrystalline Transition Metal Oxide Film
[ 全著者名 ] Takumi Moriyama, Sohta Hida, Takahiro Yamasaki, Takahisa Ohno, Satoru Kishida,and Kentaro Kinoshita
[ 掲載誌名 ] MRS Advances
[ 掲載年月 ] 2017年 1月
[ 著作区分 ] レフェリー付学術論文(外国語)
Resistance given by tiling grain surface with micro surface structures in polycrystalline metal oxide
[ 全著者名 ] T. Moriyama, T. Yamasaki, T. Ohno, S. Kishida, and K. Kinoshita
[ 掲載誌名 ] JOURNAL OF APPLIED PHYSICS
[ 掲載年月 ] 2016年 12月
[ 著作区分 ] レフェリー付学術論文(外国語)
"Improved Performance of a Conducting-Bridge Random Access Memory using Ionic Liquids" [Back coverに採択]
[ 全著者名 ] Akinori Harada, Hiroki Yamaoka, Shota Tojo, Kouhei Watanabe, Atsushi Sakaguchi, Kentaro Kinoshita, Satoru Kishida, Yukinobu Fukaya, Kazuhiko Matsumoto, Rika Hagiwara, Hiroki Sakaguchi, Toshiki Nokami, Toshiyuki Itoh
[ 掲載誌名 ] Journal of Materials Chemistry C
[ 掲載年月 ] 2016年 6月
[ 著作区分 ] レフェリー付学術論文(外国語)
Influence of ultraviolet irradiation on data retention characteristics in resistive random access memory
[ 全著者名 ] Kouhei Kimura, Kouotoku Ohmi, Satoru Kishida, and Kentaro Kinoshita
[ 掲載誌名 ] APPLIED PHYSICS LETTERS
[ 掲載年月 ] 2016年 3月
[ 著作区分 ] レフェリー付学術論文(外国語)
Formation Mechanism of Conducting Path in Resistive Random Access Memory by First Principles Calculation Using Practical Model Based on Experimental Results
[ 全著者名 ] Takumi Moriyama, Takahiro Yamasaki, Takahisa Ohno, Satoru Kishida, and Kentar Kinoshita
[ 掲載誌名 ] MRS advances
[ 掲載年月 ] 2016年
[ 著作区分 ] レフェリー付学術論文(外国語)
Simulation Study on Reproducing Resistive Switching Effect by Soret and Fick Diffusion in Resistive Random Access Memory
[ 全著者名 ] Kentaro Kinoshita, Ryosuke Koishi, Takumi Moriyama, Kouki Kawano, Hidetoshi Miyashita, Sang-Seok Lee, and Satoru Kishida
[ 掲載誌名 ] MRS Advances
[ 掲載年月 ] 2016年
[ 著作区分 ] レフェリー付学術論文(外国語)
Finding Oxygen Reservoir by Using Extremely Small Test Cell Structure for Resistive Random Access Memory with Replaceable Bottom Electrode
[ 全著者名 ] Kentaro Kinoshita, Sang-Gyu Koh, Takumi Moriyama, Satoru Kishida
[ 掲載誌名 ] Scientific Reports
[ 掲載年月 ] 2015年 12月
[ 著作区分 ] レフェリー付学術論文(外国語)
Copper Ion Containing Ionic Liquids Provides Improved Endurance and Switching Voltage Distributions of Conducting-Bridge Random Access Memory (CB-RAM).
[ 全著者名 ] Akinori Harada, Hiroki Yamaoka, Kouhei Watanabe, Kentaro Kinoshita*, Satoru Kishida, Yukinobu Fukaya, Toshiki Nokami, Toshiyuki Itoh*
[ 掲載誌名 ] CHEMISTRY LETTERS
[ 掲載年月 ] 2015年 9月
[ 著作区分 ] レフェリー付学術論文(外国語)
Enhanced stability of the HfO2 electrolyte and reduced working voltage of a CB-RAM by an ionic liquid
[ 全著者名 ] A. Harada, H. Yamaoka, R. Ogata, K. Watanabe, K. Kinoshita*, S. Kishida, T. Nokami and T. Itoh*
[ 掲載誌名 ] Journal of Materials Chemistry C
[ 掲載年月 ] 2015年 7月
[ 著作区分 ] レフェリー付学術論文(外国語)
Extraction of Filament Properties in Resistive Random Access Memory (ReRAM) Consisting of Binary-Transition-Metal-Oxides
[ 全著者名 ] Takumi Moriyama, Ryosuke Koishi, Kouhei Kimura, Satoru Kishida, Kentaro Kinoshita
[ 掲載誌名 ] Advances in Science and Technology
[ 掲載年月 ] 2014年 10月
[ 著作区分 ] レフェリー付学術論文(外国語)
Elucidation of Metal Diffusion Mechanism in Conducting-Bridge Random Access Memory (CB-RAM) Using First-Principle Calculation
[ 全著者名 ] Kentaro Kinoshita, Takahiro Yamasaki, Sho Yura, Takehisa Ohno, Satoru Kishida
[ 掲載誌名 ] Advances in Science and Technology
[ 掲載年月 ] 2014年 10月
[ 著作区分 ] レフェリー付学術論文(外国語)
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