FUJISHIRO Hiroki

Tokyo University of Science

Profile

Address 6-3-1, Niijuku, Katsushika-ku, Tokyo 125-8585, Japan
TEL : +81-3-5876-1717  ext : 4208
E-mail Address
Homepage URL http://www.te.noda.tus.ac.jp/pub/labs/fujisiro/index-j.html
Under-Graduate School 1982, Tokyo University of Science Faculty of Science and Engineering Department of Physics Graduated
Graduate School 1984, Tokyo University of Science Graduate School, Division of Science and Engineering Physics Master's course Completed program with degree
Postgraduate Qualification Tokyo University of Science Master of Science Course
Tokyo University of Science Doctor of Philosophy Research papers
Research History 1984-2001 Engaged in research and development of epitaxial growth, fabrication processes and physics of heterostructure devices (including inverted HEMTs etc) for high-speed and millimeter-wave ICs. And also engaged in research and development of MICs and MMICs with heterostructure devices.
2001- My current research interests include the coupled physical device-circuit simulation employing the Monte Carlo method, the MBE growth of III-V materials (including InAs, InSb etc) with application to nanometer electron devices, and the fabrication and characterization of nanometer structures on III-V and Si surfaces and their application to electron devices.
Employment History 1984-1995 Oki Semiconductor Technology Laboratory, Researcher
1995-2001 Oki Semiconductor Technology Laboratory, Senior Researcher, Group Leader
2001-2008 Department of Applied Electronics, Tokyo University of Science, Associate Professor
2006-2007 Massachusetts Institute of Technology, Visiting Scientist
2008- Department of Applied Electronics, Tokyo University of Science, Professor
2010-
Sex Male
Date of Birth 1959/9
Research Keyword Electron devices, Electron/electric material engineering, Thin film and surface interface physical properties
Research Area Thin film/Surface and interfacial physical properties (Fabrication and characterization of nanostructures on semiconductor surfaces)
Electronic materials/Electric materials (Epitaxial growth of compound semiconductors)
Electron device/Electronic equipment (Compound semiconductor high-speed and high-frequency devices)
Research Institute Theme Study on Device Physics-based Microwave Circuit Simulation
Study on Nano-structures and Nanoelectronics of Compaund Semiconductors
Study on Control of Compound Semiconductor Surface
Study on Simulation of GaN Devices

Academic Awards Received
Academic Society Affiliations
2019/1 - 2019/8
2019 Asia-Pasific Workshop on Fundamental and Application of Advanced Semiconducter Devices(AWAD2019)
Program committee member 
2018/11 - 2019/9
13th Topical Workshop on Heterostructure Microelectronics (TWHM2019)
technical program committee member
2018/2 - 2018/8
2018 Asia-Pasific Workshop on Fundamental and Application of Advanced Semiconducter Devices(AWAD2017)
Program committee member 
2017/2 - 2017/8
2017 Asia-Pasific Workshop on Fundamental and Application of Advanced Semiconducter Devices(AWAD2017)
Program committee member 
2016/11 - 2017/9
12th Topical Workshop on Heterostructure Microelectronics (TWHM2017)
technical program committee member
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Achievement