| Address |
6-3-1, Niijuku, Katsushika-ku, Tokyo 125-8585, Japan TEL : +81-3-5876-1717 ext : 4208 |
|---|---|
| E-mail Address | |
| Homepage URL | https://fujishirolab.gitlab.io |
| Under-Graduate School |
1982, Tokyo University of Science Faculty of Science and Engineering Department of Physics Graduated
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| Graduate School |
1984, Tokyo University of Science Graduate School, Division of Science and Engineering Physics Master's course
Completed program with degree
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| Postgraduate Qualification |
Tokyo University of Science Master of Science Course Tokyo University of Science Doctor of Philosophy Research papers |
| Research History |
1984-2001 Engaged in research and development of epitaxial growth, fabrication processes and physics of heterostructure devices (including inverted HEMTs etc) for high-speed and millimeter-wave ICs. And also engaged in research and development of MICs and MMICs with heterostructure devices. 2001- My current research interests include the coupled physical device-circuit simulation employing the Monte Carlo method, the MBE growth of III-V materials (including InAs, InSb etc) with application to nanometer electron devices, and the fabrication and characterization of nanometer structures on III-V and Si surfaces and their application to electron devices. |
| Employment History |
1984-1995 Oki Semiconductor Technology Laboratory, Researcher 1995-2001 Oki Semiconductor Technology Laboratory, Senior Researcher, Group Leader 2001-2008 Department of Applied Electronics, Tokyo University of Science, Associate Professor 2006-2007 Massachusetts Institute of Technology, Visiting Scientist 2008- Department of Applied Electronics, Tokyo University of Science, Professor 2010- |
| Research Keyword | Electron devices, Electron/electric material engineering, Thin film and surface interface physical properties |
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| Research Area |
Thin film/Surface and interfacial physical properties (Fabrication and characterization of nanostructures on semiconductor surfaces) Electronic materials/Electric materials (Epitaxial growth of compound semiconductors) Electron device/Electronic equipment (Compound semiconductor high-speed and high-frequency devices) |
| Research Institute Theme |
Study on Device Physics-based Microwave Circuit Simulation Study on Nano-structures and Nanoelectronics of Compaund Semiconductors Study on Control of Compound Semiconductor Surface Study on Simulation of GaN Devices |
| Academic Awards Received |
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| Academic Society Affiliations |
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